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PD - 20601A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
75SLQ045
75 Amp, 45V
Major Ratings and Characteristics
Description/Features The 75SLQ045 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability * Surface Mount * Lightweight * * * *
Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 75Apk, TJ =125C
75SLQ045 75
Units A
45 500 0.6
V A V
TJ, Tstg Operating and storage -55 to 150
C
CASE STYLE
CATHODE ANODE ANODE
IR Case Style SMD-1
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07/13/01
75SLQ045
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
75SLQ045 45
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 500 A @ tp = 8.3 ms half-sine
Limits
75
Units
A
Conditions
50% duty cycle @ TC = 78C, square waveform
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop See Fig. 1Q
Limits
0.68 0.87 0.64 0.90 0.61 0.8
Units
V V V V V V mA mA mA pF nH @ 75A @ 150A @ 75A @ 150A @ 75A @ 150A TJ = 25C TJ = 100C TJ = 125C
Conditions
TJ = -55C TJ = 25C TJ = 125C
I RM
Max. Reverse Leakage Current See Fig. 2Q
1.0 77 300
VR = rated VR
CT LS
Max. Junction Capacitance Typical Series Inductance
2700 5.9
VR = 5VDC ( 1MHz, 25C ) Measured from center of cathode pad to center of anode pad
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size (Typical) Case Style 2.6 200X200 SMD-1 g mils
Limits Units
-55 to 150 -55 to 150 1.1 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
Q Pulse Width < 300s, Duty Cycle < 2% R Pins 2 and 3 externally tied together
2
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75SLQ045
1000
Reverse Current - I R ( mA )
100
125C 100C
10
75C
1000
1
0.1
25C
0.01
Instantaneous Forward Current - I F (A)
0
10
20
30
40
50
100
Reverse Voltage - V R (V)
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
10 Tj = 125C
Tj = 25C
10000
Tj = -55C
1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V F (V)
Junction Capacitance - CT (pF)
T J = 25C
1000
Fig. 1 - Max. Forward Voltage Drop Characteristics
100 0 10 20 30 40 50
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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75SLQ045
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
180
Allowable Case Temprature - (C)
160 140 120 100 80 60 40 20 0 0 20 40
75SLQ045
R thJC = 1.1C/W
DC
60
80
100
120
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
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